Toho Technology
ECV Pro+
The ECV Pro+ delivers high-resolution electrical characterization,
accurately measuring mobility and carrier concentration across diverse wafers and materials.
It enhances process control and device optimization in cutting-edge semiconductor applications
like smartphones, autonomous vehicles, and high-speed memory.
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10¹³–10²⁰cm⁻³ Ultra-wide Carrier Concentration Range | 1 mm High Depth Resolution | 0.3 kHz – 50 kHz Flexible Carrier Frequency Control | 0–400mV pk-pk/ ±10V Signal & Bias Voltage Range | III-V, III-Nitrides, II-VI, Si, SiC Versatile Material Compatibility | Light Vacuum Minimal Facility Requirement |
Key Features & Benefits
Fully Automated CV System for High-Precision Carrier Profiling
The ECV Pro+ combines 25 years of profiling expertise with advanced digital control to deliver unmatched precision and repeatability. Featuring ECVision™, a real-time in-situ imaging system, it enables visual inspection of the semiconductor/electrolyte interface, significantly enhancing measurement reliability and process development.
01. High-Resolution Carrier Profiling
The ECV Pro+ utilizes electrochemical CV analysis to deliver carrier concentration profiling
across a wide range—from 10¹³ to 10²⁰ cm⁻³—with depth resolution better than 1 nm.
It supports various materials including Si, III-V, III-N, and SiC, making it ideal for
precise doping characterization, material comparison, and process tuning.
02. Fully Automated & Highly Reproducible System
From sample loading to measurement, all steps are fully automated,
minimizing operator influence and maximizing repeatability.
The system offers precise control of carrier frequency (0.3–50 kHz) and bias voltage (±10 V),
along with temperature stabilization and sequence-based automation for consistent, reliable data across multiple runs.
03. ECVision™ In-situ Interface Monitoring
Toho’s proprietary ECVision™ system provides real-time visual monitoring of the semiconductor–electrolyte interface.
It enables operators to detect etching issues such as bubble formation, particle contamination, or irregular interface behavior,
improving overall analysis reliability, minimizing errors, and enhancing confidence in the measurement process.
