Toho Technology

ECV Pro+

ECV Pro+는 반도체 소재의 캐리어 농도 프로파일링을 위한 업계 최고 수준의 올인원 ECV(Advanced Electrochemical Capacitance Voltage) 시스템입니다.


ECV Profiling 기반의 측정 방식을 통해 복잡한 에피택셜 구조 전반에 걸친 도핑 분포를 탁월한 정확도와 재현성으로 분석합니다.


고급 반도체 연구와 품질 관리를 위해 설계된 ECV Pro+는 소재 거동과 디바이스 성능을 정밀하게 규명할 수 있는 심층적 인사이트를 제공하여, 공정 최적화와 

성능 향상을 한 단계 앞당깁니다.

10¹³ – 10²⁰ cm⁻³

Ultra-wide Carrier Concentration Range

1 nm

High Depth Resolution

0.3 kHz – 50 kHz

Flexible Carrier Frequency Control

0–400 mV pk-pk/ ±10V

Signal & Bias Voltage Range

III-V,III-Nitrides,II-VI,Si,SiC

Versatile Material Compatibility

Light Vacuum

Minimal Facility Requirement

Keyfeatures & benefits


Fully Automated CV System for High-Precision Carrier Profiling



The ECV Pro+ combines 25 years of profiling expertise with advanced digital control to deliver unmatched precision and repeatability. Featuring ECVision™, a real-time in-situ imaging system, it enables visual inspection of the  semiconductor/ electrolyte interface, significantly enhancing measurement reliability and process development.




01. High-Resolution Carrier Profiling

The ECV Pro+ utilizes electrochemical CV analysis to deliver carrier concentration profiling across a wide range—from 10¹³ to 10²⁰ cm⁻³—with depth  resolution better than 1 nm. It supports various materials including Si, III-V, III-N, and SiC, making it ideal for precise doping characterization, material comparison, and process tuning.


02. Fully Automated & Highly Reproducible System

From sample loading to measurement, all steps are fully automated, minimizing operator influence and maximizing repeatability. The system offers precise control of carrier frequency (0.3–50 kHz) and bias voltage (±10 V), along with temperature stabilization and sequence-based automation for consistent, reliable data across multiple runs.


03. ECVision™ In-situ Interface Monitoring

Toho’s proprietary ECVision™ system provides real-time visual monitoring of the semiconductor–electrolyte interface. It enables operators to detect etching issues such as bubble formation, particle contamination, or irregular interface behavior,
improving overall analysis reliability, minimizing errors, and enhancing confidence in the measurement process.

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